High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure-Reference-Cited by-同舟云学术

High-κ dielectric ε-Ga2O3 stabilized in a transparent heteroepitaxial structure grown by mist CVD at atmospheric pressure

Published:2020 Issue:2 Volume:22 Page:381-385
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yusa Subaru¹²³⁴⁵,Oka Daichi¹²³⁴⁵^ORCID,Fukumura Tomoteru¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry

2. Graduate School of Science

3. Tohoku University

4. Sendai 980-8578

5. Japan

Abstract

The dielectric constant of metastable ε-Ga₂O₃ was evaluated for the first time by using a transparent heteroepitaxial structure of ε-Ga₂O₃/indium tin oxide/yttria-stabilized zirconia.

Funder

Murata Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/C9CE01532A

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