Quality-enhanced AlN epitaxial films grown on Al substrates by two-step growth-Reference-Cited by-同舟云学术

Quality-enhanced AlN epitaxial films grown on Al substrates by two-step growth

Published:2015 Issue:118 Volume:5 Page:97308-97313
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Wenliang¹²³⁴,Yang Weijia¹²³⁴,Wang Haiyan¹²³⁴,Zhu Yunnong¹²³⁴,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province

Abstract

Quality-enhanced AlN epitaxial films have been grown on Al substrates by pulsed laser deposition with two-step growth by the combination of low-temperature and high-temperature growth.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA19771F

Reference35 articles.

1. Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition

2. Epitaxial growth of AlN films on Rh ultraviolet mirrors

3. Thermal stability of AlN films prepared by ion beam assisted deposition

4. High quality AlN for deep UV photodetectors

5. First-principles study of AlN nanosheets with chlorination

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