Thermal stability of AlN films prepared by ion beam assisted deposition-Reference-Cited by-同舟云学术

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Thermal stability of AlN films prepared by ion beam assisted deposition

Published:2015-08 Issue: Volume:347 Page:109-115
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Meng Jian-ping,Liu Xiao-peng,Fu Zhi-qiang,Wang Xiao-jing,Hao Lei

Funder

High-Tech Resesrch and Development (863) Program

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. Dependence of N2 pressure on the crystal structure and surface quality of AlN thin films deposited via pulsed laser deposition technique at room temperature films deposited via pulsed laser deposition technique at room temperature;Shukla;Appl. Surf. Sci.,2008

2. The characterization of aluminum nitride thin films prepared by dual ion beam sputtering;Chen;Surf. Coat. Technol.,2006

3. AlN thin films prepared by ion beam induced chemical vapour deposition;Sánchez-López;Thin Solid Films,1998

4. Effect of substrate bias on AlN thin film preparation in shielded reactive vacuum arc deposition;Takikawa;Thin Solid Films,2001

5. Fabrication of SOI structure with AlN film as buried insulator by ion-cut process;Men;Appl. Surf. Sci.,2002

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC;Nanotechnology;2024-04-23

2. Effects of thickness and interlayer on optical properties of AlN films at room and high temperature;Journal of Vacuum Science & Technology A;2021-07

3. Material epitaxy of AlN thin films;Ultrawide Bandgap Semiconductors;2021

4. Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum;Coatings;2020-10-03

5. Polarity Inversion of Aluminum Nitride Thin Films by using Si and MgSi Dopants;Scientific Reports;2020-03-09

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