High-quality Ge film grown on Si substrate and its thermodynamic mechanism-Reference-Cited by-同舟云学术

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High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Published:2021-04 Issue: Volume:186 Page:110068
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Liu Penghao,Wu Kefeng,Xiahou Shen,Yang Yuhui,Chen Sheng,Lei Renfang,Guo Pei,Wang Wenliang,Li Guoqiang

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference26 articles.

1. Ultrafast all-optical switching of germanium-based flexible metaphotonic devices;Lim;Adv. Mater.,2018

2. Hydrogenated amorphous silicon germanium alloy with enhanced photosensitivity prepared by plasma enhanced chemical vapor deposition at high temperature;Yan;Vacuum,2013

3. High-performance SiGe HBTs for next generation BiCMOS technology;Rücker;Semicond. Sci. Technol.,2018

4. High responsivity SiGe heterojunction phototransistor on silicon photonics platform;Sorianello;Optic Express,2015

5. Epitaxial Ge solar cells directly grown on Si (001) by MOCVD using isobutylgermane;Kim;J. Kor. Phys. Soc.,2018

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1. Preparation of high-density and excellent bending strength pure tungsten target by hot oscillatory pressing sintering and its magnetron sputtering coating;International Journal of Refractory Metals and Hard Materials;2024-09

2. Si1–Ge deposition and properties;Silicon-Germanium Alloys for Photovoltaic Applications;2023

3. Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer;Vacuum;2022-09

4. The strain model of misfit dislocations at Ge/Si hetero-interface;Vacuum;2022-02

5. Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process;Vacuum;2022-02

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