High quality AlN for deep UV photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3200229
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1. InGaN Single-Quantum-Well LEDs
2. Defects and Doping
3. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia
4. 200nm deep ultraviolet photodetectors based on AlN
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