Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects-Reference-Cited by-同舟云学术

Electromechanical conversion efficiency of GaN NWs: critical influence of the NW stiffness, the Schottky nano-contact and the surface charge effects

Published:2022 Issue:13 Volume:14 Page:4965-4976
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Gogneau Noelle¹^ORCID,Chrétien Pascal²,Sodhi Tanbir¹²,Couraud Laurent¹,Leroy Laetitia¹,Travers Laurent¹,Harmand Jean-Chistophe¹,Julien François H.¹,Tchernycheva Maria¹,Houzé Frédéric²

Affiliation:

1. Centre de Nanosciences et Nanotechnologies, Université Paris-Saclay, CNRS, UMR9001, Boulevard Thomas Gobert, 91120 Palaiseau, France

2. Université Paris-Saclay, CentraleSupélec, Sorbonne Université, CNRS, Laboratoire de Génie électrique et électronique de Paris, 11 rue Joliot-Curie, 91190 Gif sur Yvette, France

Abstract

The GaN piezoelectric nanowires (NWs) are considered as promising nanomaterials to develop high-efficient piezoelectric generators.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR07863A

Reference65 articles.

1. A III–V nanowire channel on silicon for high-performance vertical transistors