Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure-Reference-Cited by-同舟云学术

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure

Published:2018 Issue:26 Volume:20 Page:17899-17908
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Phuc Huynh V.¹²³⁴,Hieu Nguyen N.¹²³⁴^ORCID,Hoi Bui D.⁵⁶⁷⁴,Nguyen Chuong V.⁸⁹¹⁰⁴^ORCID

Affiliation:

1. Institute of Research and Development

2. Duy Tan University

3. Da Nang

4. Vietnam

5. Department of Physics

6. Hue University of Education

7. Hue

8. Department of Materials Science and Engineering

9. Le Quy Don Technical University

10. 100000 Ha Noi

Abstract

In this work, using density functional theory we investigated systematically the electronic properties and Schottky barrier modulation in a multilayer graphene/bilayer-GaSe heterostructure by varying the interlayer spacing and by applying an external electric field.

Funder

National Foundation for Science and Technology Development

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP02190B

Reference84 articles.

1. Van der Waals heterostructures

2. 2D materials and van der Waals heterostructures

3. Atomically thin p–n junctions with van der Waals heterointerfaces