Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures-Reference-Cited by-同舟云学术

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Electronic properties of two-dimensional van der Waals GaS/GaSe heterostructures

Published:2015 Issue:43 Volume:3 Page:11548-11554
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wei Wei¹²³⁴⁵,Dai Ying¹²³⁴⁵,Niu Chengwang⁶⁷⁸⁹,Li Xiao¹⁰¹¹¹²¹³,Ma Yandong¹⁴¹⁵¹⁶⁹,Huang Baibiao¹²³⁴⁵

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan 250100

5. China

6. Peter Grünberg Institut and Institute for Advanced Simulation

7. Forschungszentrum Jülich and JARA

8. 52425 Jülich

9. Germany

10. Department of Physics

11. University of Texas at Austin

12. Austin

13. USA

14. Department of Physics and Earth Science

15. Jacobs University Bremen

16. 28759 Bremen

Abstract

The exciton separation and Rashba spin splitting have been demonstrated in van der Waals GaS/GaSe heterostructures.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02975A

Reference45 articles.

1. Tubular structures of GaS

2. Generation of Onions and Nanotubes of GaS and GaSe through Laser and Thermally Induced Exfoliation

3. Crystal symmetry and pressure effects on the valence band structure ofγ-InSe andε-GaSe: Transport measurements and electronic structure calculations

4. Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe

5. Topological Phase Transition in Layered GaS and GaSe

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