Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors-Reference-Cited by-同舟云学术

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Hydroxyl radical-assisted decomposition and oxidation in solution-processed indium oxide thin-film transistors

Published:2015 Issue:28 Volume:3 Page:7499-7505
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sabri Mardhiah M.¹²³⁴,Jung Joohye¹²³⁴,Yoon Doo Hyun¹²³⁴,Yoon Seokhyun¹²³⁴,Tak Young Jun¹²³⁴,Kim Hyun Jae¹²³⁴

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul 120-749

4. Republic of Korea

Abstract

Solution-processed indium oxide TFTs were fabricated by hydroxyl radical-assisted (HRA) decomposition and oxidation.

Funder

Ministry of Knowledge Economy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01457C

Reference36 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Toward High-Performance Amorphous GIZO TFTs

4. Recent advances in low-temperature solution-processed oxide backplanes

5. Review of solution-processed oxide thin-film transistors

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4. Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors;Applied Surface Science;2024-01

5. Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing;Nanomaterials;2023-08-01

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