Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid-Reference-Cited by-同舟云学术

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid

Published:2022 Issue:8 Volume:12 Page:4648-4655
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Shushanian Artem¹^ORCID,Iida Daisuke²^ORCID,Zhuang Zhe²^ORCID,Han Yu¹^ORCID,Ohkawa Kazuhiro²^ORCID

Affiliation:

1. Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

2. Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia

Abstract

We studied the mechanism of wet electrochemical etching of n-GaN films in oxalic acid.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D1RA07992A

Reference44 articles.

1. Thermodynamic Oxidation and Reduction Potentials of Photocatalytic Semiconductors in Aqueous Solution

2. Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

3. F.Medjdoub , J.-F.Carlin , M.Gonschorek , E.Feltin , M. A.Py , D.Ducatteau , C.Gaquiere , N.Grandjean and E.Kohn , in 2006 International Electron Devices Meeting , IEEE , 2006 , pp. 1–4

4. Stability of (1\bar100)m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition

5. Testing the Temperature Limits of GaN-Based HEMT Devices

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