Author:
Suchikova Yana, ,Kovachov Sergii,Lazarenko Andriy,Lopatina Hanna,Tsybuliak Natalia,Нurenko Olha,Bohdanov Ihor, , , , , ,
Abstract
We present the study of the n-GaAs surface modification by the electrochemical etching in different electrolyte compositions. The possibility of forming the different micromorphology types on the identical GaAs samples, in particular the possibility of forming the crystallographic, defective-dislocation, and isotope interfaces, was investigated.
Publisher
Lviv Polytechnic National University
Subject
General Chemical Engineering,General Chemistry
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