Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Author:

Park Hwanyeol1234,Lee Sungwoo1234ORCID,Kim Ho Jun5678,Woo Daekwang910118,Lee Jong Myeong910118,Yoon Euijoon123412,Lee Gun-Do123412ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Seoul National University

3. Seoul 08826

4. Korea

5. Department of Mechanical Engineering

6. Dong-A University

7. Busan 49315

8. South Korea

9. Memory Thin Film Technology Team

10. Giheung Hwaseong Complex

11. Samsung Electronics

12. Research Institute of Advanced Materials and Inter-University Semiconductor Research Center

Abstract

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF6.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3