Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study-Reference-Cited by-同舟云学术

Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

Published:2018 Issue:68 Volume:8 Page:39039-39046
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Park Hwanyeol¹²³⁴,Lee Sungwoo¹²³⁴^ORCID,Kim Ho Jun⁵⁶⁷⁸,Woo Daekwang⁹¹⁰¹¹⁸,Lee Jong Myeong⁹¹⁰¹¹⁸,Yoon Euijoon¹²³⁴¹²,Lee Gun-Do¹²³⁴¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Seoul National University

3. Seoul 08826

4. Korea

5. Department of Mechanical Engineering

6. Dong-A University

7. Busan 49315

8. South Korea

9. Memory Thin Film Technology Team

10. Giheung Hwaseong Complex

11. Samsung Electronics

12. Research Institute of Advanced Materials and Inter-University Semiconductor Research Center

Abstract

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF₆.

Funder

Korea Institute of Science and Technology

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA07354F

Reference35 articles.

1. Adsorption and surface reaction of bis-diethylaminosilane as a Si precursor on an OH-terminated Si (001) surface

2. Low temperature PECVD SiNx films applied in OLED packaging

3. Experimental study of the effect of process parameters on plasma-enhanced chemical vapour deposition of silicon nitride film

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