Nonvolatile memory devices based on poly(vinyl alcohol) + graphene oxide hybrid composites
Author:
Affiliation:
1. Communication and Electronics Engineering Institute
2. Qiqihar University
3. Qiqihar
4. China
5. HLJ Province Key Laboratories of Senior-education for Electronic Engineering
6. Heilongjiang University
7. Harbin
Abstract
The performance of the ITO/PVA + GO/Al device was effectively enhanced by the introduction of GO into the PVA matrix.
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00007J
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5. Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon
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