Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices-Reference-Cited by-同舟云学术

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Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices

Published:2015-08-31 Issue:40 Volume:27 Page:6170-6175
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yoo Eun Ji¹²,Lyu Miaoqiang²,Yun Jung-Ho²,Kang Chi Jung³,Choi Young Jin¹,Wang Lianzhou²

Affiliation:

1. Department of Nanotechnology and Advanced Materials Engineering; Sejong University; Seoul 143-747 South Korea

2. Nanomaterials Centre; School of Chemical Engineering and AIBN; The University of Queensland; St Lucia, Brisbane QLD 4072 Australia

3. Department of Physics; Myong Ji University; Yongin-si 449-728 South Korea

Funder

Ministry of Science ICT & Future Planning

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201502889/fullpdf

Reference50 articles.

1. Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

2. Resistive Switching Characteristics of the Cr/ZnO/Cr Structure

3. Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

4. Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO3/γ-Fe2O3]/FTO device

5. Resistive Switching Characteristics of ZnO Nanowires

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