Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8-Reference-Cited by-同舟云学术

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Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Published:2013-07-22 Issue:8 Volume:13 Page:3648-3653
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Dubost Vincent¹,Cren Tristan¹,Vaju Cristian²,Cario Laurent²,Corraze Benoît²,Janod Etienne²,Debontridder François¹,Roditchev Dimitri¹

Affiliation:

1. Institut des Nanosciences de Paris, Université Pierre et Marie Curie, CNRS UMR 7588, 4 place Jussieu, F-75005 Paris, France

2. Institut des Matériaux Jean Rouxel, CNRS Université de Nantes, UMR 6502, 2 rue de la Houssinière, BP32229, 44322 Nantes, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl401510p

Reference24 articles.

1. International Technology Roadmap for Semiconductors,http://www.itrs.net/ (2011) .

2. Nanoionics-based resistive switching memories

3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Memristive devices for computing

5. Resistive switching in transition metal oxides

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