Novel graphdiyne quantum dots for resistive random access memory

Abstract

Abstract Graphdiyne (GDY), a rising allotropic form of carbon, exhibits a rich variety of electronic, optical and mechanical properties due to the unique π-conjugated structure. However, the processability of GDY into perovskite composites is a vital yet challenging area for further optimized applications. Herein, we synthesized a novel GDY quantum dots (QDs) via Sonogashira cross-coupling reaction between GDY and anthraquinones. The as-prepared GDY QDs show good solubility with perovskite precursor and the GDY QDs doped perovskite was obtained. The GDY QDs based perovskite resistive random access memory device shows reliable resistive switching behaviour with enhanced ON/OFF ratio of ∼103 and long endurance due to the optimized electrode/dielectric interface, which offers opportunities in electronic and optoelectronic fields.