基于准二维钙钛矿的高稳定电阻随机存储器
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s40843-023-2738-5.pdf
Reference56 articles.
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4. Nayak A, Tsuruoka T, Terabe K, et al. Switching kinetics of a Cu2S-based gap-type atomic switch. Nanotechnology, 2011, 22: 235201
5. Rehman MM, Rehman HMMU, Gul JZ, et al. Decade of 2D-materials-based RRAM devices: A review. Sci Tech Adv Mater, 2020, 21: 147–186
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