Strongly stable resistive random access memory based on quasi-two-dimensional perovskites-Reference-Cited by-同舟云学术

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Strongly stable resistive random access memory based on quasi-two-dimensional perovskites

Published:2024-01-23 Issue:3 Volume:67 Page:879-886
ISSN:2095-8226
Container-title:Science China Materials
language:en
Short-container-title:Sci. China Mater.

Author:

Chen Xiang,Pan Xiaoxin,Jiang Bowen,Wei Jiayun,Long Yan,Tang Jie,Li Xiaoqing,Zhang Jun,Duan Jinxia,Tao Li,Ma Guokun,Wang Hao

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s40843-023-2738-5.pdf

Reference56 articles.

1. Zhang Z, Wang Z, Shi T, et al. Memory materials and devices: From concept to application. InfoMat, 2020, 2: 261–290

2. Shen Z, Zhao C, Qi Y, et al. Advances of RRAM devices: Resistive switching mechanisms, materials and bionic synaptic application. Nanomaterials, 2020, 10: 1437

3. Morales-Masis M, van der Molen SJ, Fu WT, et al. Conductance switching in Ag2S devices fabricated by in situ sulfurization. Nanotechnology, 2009, 20: 095710

4. Nayak A, Tsuruoka T, Terabe K, et al. Switching kinetics of a Cu2S-based gap-type atomic switch. Nanotechnology, 2011, 22: 235201

5. Rehman MM, Rehman HMMU, Gul JZ, et al. Decade of 2D-materials-based RRAM devices: A review. Sci Tech Adv Mater, 2020, 21: 147–186

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