Decade of 2D-materials-based RRAM devices: a review-Reference-Cited by-同舟云学术

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Decade of 2D-materials-based RRAM devices: a review

Published:2020-01-31 Issue:1 Volume:21 Page:147-186
ISSN:1468-6996
Container-title:Science and Technology of Advanced Materials
language:en
Short-container-title:Science and Technology of Advanced Materials

Author:

Rehman Muhammad Muqeet¹,Rehman Hafiz Mohammad Mutee Ur²,Gul Jahan Zeb³,Kim Woo Young²,Karimov Khasan S¹,Ahmed Nisar¹

Affiliation:

1. Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan

2. Faculty of Electronic Engineering, Jeju National University, Jeju, South Korea

3. Department of Mechatronics & Biomedical Engineering, AIR University, Islamabad, Pakistan

Funder

Higher Education Commission, Pakistan

Publisher

Informa UK Limited

Subject

General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/14686996.2020.1730236

Reference221 articles.

1. HeatWatch: Improving 3D NAND Flash Memory Device Reliability by Exploiting Self-Recovery and Temperature Awareness

2. Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

3. Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

4. Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

5. Scaling Challenge Of Nand Flash Memory Cells

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1. Ni3C nanosheets and PVA nanocomposite based memristor for low-cost and flexible non-volatile memory devices;Materials Science in Semiconductor Processing;2024-12

2. Density functional theory and molecular dynamics simulations for resistive switching research;Materials Science and Engineering: R: Reports;2024-09

3. Compositional effects of hybrid MoS₂–GO active layer on the performance of unipolar, low-power and multistate RRAM device;Nanotechnology;2024-07-16

4. Development and optimization of large-scale integration of 2D material in memristors;2D Materials;2024-07-05

5. Highly flexible and uniform switching of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)based RRAM achieved through Ag NWs embedded for high-density storage;Materials Today Communications;2024-06

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