A new approach to free-standing GaN using β-Ga2O3 as a substrate-Reference-Cited by-同舟云学术

A new approach to free-standing GaN using β-Ga2O3 as a substrate

Published:2012 Issue:24 Volume:14 Page:8536
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Kachel Krzysztof,Korytov Maxim,Gogova Daniela,Galazka Zbigniew,Albrecht Martin,Zwierz Radoslaw,Siche Dietmar,Golka Sebastian,Kwasniewski Albert,Schmidbauer Martin,Fornari Roberto

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/CE/C2CE25976A

Reference15 articles.

1. Strain determination in heteroepitaxial GaN

2. Study of cracking mechanism in GaN/α‐Al2O3structure

3. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff

4. Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy

5. Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

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