Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)-Reference-Cited by-同舟云学术

Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)

Published:2019 Issue:11 Volume:1 Page:4433-4441
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Vettori Marco¹²³⁴⁵,Danescu Alexandre¹²³⁴⁵^ORCID,Guan Xin¹²³⁴⁵,Regreny Philippe¹²³⁴⁵,Penuelas José¹²³⁴⁵,Gendry Michel¹²³⁴⁵

Affiliation:

1. Université de Lyon

2. Institut des Nanotechnologies de Lyon – INL

3. Ecole Centrale de Lyon

4. 69134 Ecully

5. France

Abstract

In this work we show that the incidence angle of group-III element fluxes plays a significant role in the diffusion-controlled growth of self-assisted III–V nanowires by molecular beam epitaxy.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NA/C9NA00443B

Reference41 articles.

1. Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy

2. Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy

3. Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

4. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

5. Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growing self-assisted GaAs nanowires up to 80 μm long by molecular beam epitaxy;Nanotechnology;2022-11-11

2. Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy;The Journal of Physical Chemistry C;2021-12-15

3. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy;Nanotechnology;2021-01-25

4. Phase-Pure Wurtzite GaAs Nanowires Grown by Self-Catalyzed Selective Area Molecular Beam Epitaxy for Advanced Laser Devices and Quantum Disks;ACS Applied Nano Materials;2020-10-19

5. Crystal phase engineering of self-catalyzed GaAs nanowires using a RHEED diagram;Nanoscale Advances;2020