Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires-Reference-Cited by-同舟云学术

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Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires

Published:2011-08-15 Issue:9 Volume:11 Page:3848-3854
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Rudolph Daniel¹,Hertenberger Simon¹,Bolte Stefanie¹²,Paosangthong Watcharapong¹,Spirkoska Danĉe¹,Döblinger Markus²,Bichler Max¹,Finley Jonathan J.¹,Abstreiter Gerhard¹³,Koblmüller Gregor¹

Affiliation:

1. Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching, 85748, Germany

2. Department of Chemistry, Ludwig-Maximilians-Universität München, Munich, 81377, Germany

3. Institute for Advanced Study, Technische Universität München, Garching, 85748, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl2019382

Reference49 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Nanowire photonics

3. Epitaxial Growth of III-V Nanowires on Group IV Substrates

4. Epitaxial III−V Nanowires on Silicon

5. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate

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