High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning-Reference-Cited by-同舟云学术

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High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

Published:2011-05-20 Issue:27 Volume:22 Page:275602
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Plissard S,Larrieu G,Wallart X,Caroff P

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/22/i=27/a=275602/pdf

Reference33 articles.

1. Critical diameter for III-V nanowires grown on lattice-mismatched substrates

2. Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates

3. Effect of As preadsorption on InAs nanowire heteroepitaxy on Si(111): A first-principles study

4. Epitaxial growth of InP nanowires on germanium

5. Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates

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