Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants-Reference-Cited by-同舟云学术

Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants

Published:2021 Issue:48 Volume:50 Page:17935-17944
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Ko Byeong Guk¹,Nguyen Chi Thang¹^ORCID,Gu Bonwook¹,Khan Mohammad Rizwan¹,Park Kunwoo²,Oh Hongjun³,Park Jungwon²^ORCID,Shong Bonggeun³^ORCID,Lee Han-Bo-Ram¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea

2. School of Chemical and Biological Engineering, Seoul National University, 08826, Korea

3. Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea

Abstract

Two counter reactants, H2O and O3, were individually employed, as well as in combination with consecutive exposure by H2O–O3 and O3–H2O. The film growth behaviors and properties differed when the sequence of exposure of the substrate to the reactants was varied.

Funder

Incheon National University

Ministry of Trade, Industry and Energy

Korea Semiconductor Research Consortium

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/DT/D1DT03465K

Reference74 articles.

1. Atomic Layer Deposition: An Overview