Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites-Reference-Cited by-同舟云学术

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Published:2015 Issue:44 Volume:17 Page:29978-29984
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Sun Yanmei¹²³⁴,Miao Fengjuan¹²³⁴,Li Rui⁵⁶²³⁴,Wen Dianzhong⁷⁸⁹⁴

Affiliation:

1. Communication and Electronics Engineering Institute

2. Qiqihar University

3. Qiqihar 161006

4. China

5. Department of Physics

6. College of Science

7. HLJ Province Key Laboratories of Senior-education for Electronic Engineering

8. Heilongjiang University

9. Harbin

Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C5CP05481H

Reference32 articles.

1. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

2. Bistable memory devices with lower threshold voltage by extending the molecular alkyl-chain length

3. Three-Dimensional Integration of Organic Resistive Memory Devices

4. Donor–acceptor polymers for advanced memory device applications

5. Tunable Electrical Memory Characteristics Using Polyimide:Polycyclic Aromatic Compound Blends on Flexible Substrates

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