Resistive Switching Behavior of TiO2/(PVP:MoS2) Nanocomposite Bilayer Hybrid RRAM
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Publisher
Springer Nature Switzerland
Link
https://link.springer.com/content/pdf/10.1007/978-3-031-21514-8_39
Reference22 articles.
1. Lanza, M., et al.: Recommended methods to study resistive switching devices. Adv. Electron. Mater. 5, 1800143 (2019)
2. Wong, H.S.P., et al.: Metal-oxide RRAM. Proc. IEEE 100(6), 1951–1970 (2012)
3. Zahoor, F., Azni Zulkifli, T.Z., Khanday, F.A.: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications. Nanoscale Res. Lett. 15(1), 1–26 (2020). https://doi.org/10.1186/s11671-020-03299-9
4. Trapatseli, M., et al.: Engineering the switching dynamics of TiOx-based RRAM with Al doping. J. Appl. Phys. 120, 2x (2016)
5. Lodhi, A., et al.: Bipolar resistive switching properties of TiO x/graphene oxide doped PVP based bilayer ReRAM. J. Micromech. Microeng. 32, 4 (2022)
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