1. Institute of Functional Nano & Soft Materials (FUNSOM); Collaborative Innovation Center of Suzhou Nano Science & Technology; Soochow University; 199 Ren-Ai Road Suzhou 215123 China
2. Department of Electrical Engineering; Stanford University; Stanford CA 94305 USA
3. Dipartimento di Elettronica; Informazione e Bioingegneria; Politecnico di Milano and IU.NET; Piazza L. da Vinci 32 20133 Milano Italy
4. Electrical and Computer Engineering; University of California; Santa Barbara CA 93106-9560 USA
5. Department of Physics and Astronomy; University of California; Los Angeles CA 90095 USA
6. Dipartimento di Scienze e Metodi dell' Ingegneria; Universita degli Studi di Modena e Reggio Emilia; Via Amendola 1 42122 Reggio Emilia Italy
7. Department of Electrical and Computer Engineering; University of Massachusetts; Amherst MA 01003 USA
8. IMEC; Kapeldreef 75 B-3001 Leuven Belgium
9. Key Laboratory of Microelectronic Devices and Circuits; Institute of Microelectronics; Peking University; Beijing 100871 P. R. China
10. Dipartimento di Ingegneria “Enzo Ferrari”; Universita degli Studi di Modena e Reggio Emilia; Reggio Emilia 41121 Italy
11. Department of Electronic & Electrical Engineering; UCL; Torrington Place; London WC1E 7JE UK
12. Department of Physics and Astronomy; University College London; London WC1E 6BT UK
13. Department of Electronics Engineering and Institute of Electronics; National Chiao Tung University; Hsinchu 300 Taiwan Republic of China
14. Microelectronics Research Center; The University of Texas at Austin; Austin TX 78758 USA
15. IBM Research-Almaden; 650 Harry Road San Jose CA 95120 USA
16. Departamento de Electrónica y Tecnología de Computadores; Universidad de Granada; Facultad de Ciencias; Avd. Fuentenueva s/n 18071 Granada Spain
17. Departament d'Enginyeria Electrònica; Universitat Autònoma de Barcelona; Barcelona 08193 Spain
18. Engineering Product Development Pillar; Singapore University of Technology and Design; Singapore 487372 Singapore
19. Shanghai Key Laboratory of Multidimensional Information Processing; Department of Electronic Engineering; East China Normal University; 500 Dongchuan Road Shanghai 200241 China
20. IBM Research Division; 1000 River Road Essex Junction VT 05452-4299 USA
21. Department of Electrical Engineering and Computer Science; University of Michigan; Ann Arbor MI 48109 USA
22. CEA-LETI; Silicon Components Division; 17 rue des Martyrs 38054 Grenoble, Cedex 9 France
23. Department of Electronics and Electrical Engineering; Liverpool John Moores University; Liverpool L3 3AF UK
24. Institute of Microelectronics; Tsinghua University; Beijing 100084 China
25. Key Laboratory of Magnetic Materials and Devices; Ningbo Institute of Materials Technology and Engineering; Chinese Academy of Sciences; Ningbo Zhejiang 315201 China
26. Walter Schottky Institute and Physics Department; Technical University of Munich; Garching 85748 Germany
27. Chair of Electronic Devices; RWTH Aachen University; 52074 Aachen Germany
28. Key Laboratory of Microelectronics Device & Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 China
29. MDLab s.r.l.; Via Sicilia 31 42122 Reggio Emilia Italy
30. Institut für Werkstoffe der Elektrotechnik 2; RWTH Aachen University; 52074 Aachen Germany