Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis-Reference-Cited by-同舟云学术

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Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis

Published:2024-11 Issue: Volume:182 Page:108726
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Maldonado David,Cantudo Antonio,Swamy Reddy Keerthi Dorai,Pechmann Stefan,Uhlmann Max,Wenger Christian,Roldan Juan Bautista,Perez Eduardo

Funder

Federal Ministry of Education and Research Berlin Office

Espana Ministerio de Ciencia e Innovacion

Publisher

Elsevier BV

Reference25 articles.

1. Memristive technologies for data storage, computation, encryption, and radio-frequency communication;Lanza;Science,2022

2. Bridging biological and artificial neural networks with emerging neuromorphic devices: fundamentals, progress, and challenges;Tang;Adv. Mater.,2019

3. An analysis on the architecture and the size of quantized hardware neural networks based on Memristors;Romero-Zaliz;Electronics,2021

4. Two-dimensional materials memory devices with floating metal gate for neuromorphic applications;Khan;Materials Today Advances,2023

5. CogniFiber: harnessing biocompatible and biodegradable 1D collagen nanofibers for sustainable nonvolatile memory and synaptic learning applications;Rokade;Adv. Mater.,2024

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