Engineering the switching dynamics of TiOx-based RRAM with Al doping
Author:
Affiliation:
1. Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Seventh Framework Programme (FP7)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4958672
Reference33 articles.
1. The mechanism of electroforming of metal oxide memristive switches
2. Resistive Switching Effect in Titanium Oxides
3. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
4. Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap
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