Nitrogen-Oxyanion-Doped HfO<sub>2</sub> Resistive Random-Access Memory With Chemically Enhanced Forming-Reference-Cited by-同舟云学术

Nitrogen-Oxyanion-Doped HfO₂ Resistive Random-Access Memory With Chemically Enhanced Forming

Published:2023-04 Issue:4 Volume:44 Page:618-621
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hu Ruofei¹,Tang Jianshi¹^ORCID,Xi Yue¹^ORCID,Jiang Zhixing¹,Lu Yuyao¹,Gao Bin¹^ORCID,Qian He¹,Wu Huaqiang¹^ORCID

Affiliation:

1. Beijing National Research Center for Information Science and Technology (BNRist), School of Integrated Circuits, Tsinghua University, Beijing, China

Funder

National Natural Science Foundation of China

STI 2030-Major Projects

Center of Nanofabrication, Tsinghua University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10056311.pdf?arnumber=10056311

Reference29 articles.

1. A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal–Oxide–Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability

2. Realizing forming-free characteristic by doping Ag into HfO2-based RRAM

3. Resistive switching properties for fluorine doped titania fabricated using atomic layer deposition

4. A three-bit-per-cell via-type resistive random access memory gated metal-oxide semiconductor field-effect transistor non-volatile memory with the FORMing-free characteristic

5. Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

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