Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read-Reference-Cited by-同舟云学术

Ferroelectric transistors with asymmetric double gate for memory window exceeding 12 V and disturb-free read

Published:2021 Issue:38 Volume:13 Page:16258-16266
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Mulaosmanovic Halid¹^ORCID,Kleimaier Dominik²,Dünkel Stefan²,Beyer Sven²,Mikolajick Thomas¹³^ORCID,Slesazeck Stefan¹

Affiliation:

1. NaMLab gGmbH, 01187 Dresden, Germany

2. GlobalFoundries, Dresden Module One LLC & Co. KG, 01109 Dresden, Germany

3. Chair of Nanoelectronics, TU Dresden, 01062 Dresden, Germany

Abstract

The asymmetric double-gate hafnium oxide based ferroelectric field-effect transistor displays a memory window exceeding 12 V and multi-level storage of 4 bit per cell with a disturb-free read.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR05107E

Reference47 articles.

1. Ferroelectric field-effect transistors based on HfO2: a review

2. M.Trentzsch , S.Flachowsky , R.Richter , J.Paul , B.Reimer , D.Utess , S.Jansen , H.Mulaosmanovic , S.Müller , S.Slesazeck , J.Ocker , M.Noack , J.Müller , P.Polakowski , J.Schreiter , S.Beyer , T.Mikolajick and B.Rice , A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs , in IEEE International Electron Devices Meeting (IEDM) , 2016 , pp. 11–15

3. K.Florent , M.Pesic , A.Subirats , K.Banerjee , S.Lavizzari , A.Arreghini , L.Di Piazza , G.Potoms , F.Sebaai , S. R. C.McMitchell , M.Popovici , G.Groeseneken and J.Van Houdt , Vertical ferroelectric HfO 2 FET based on 3-D NAND architecture: Towards dense low-power memory , in IEEE International Electron Devices Meeting (IEDM) , 2018 , pp. 2–5

4. Ferroelectric materials for neuromorphic computing

5. Mimicking biological neurons with a nanoscale ferroelectric transistor

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