Formation of mononuclear N,O-chelate zirconium complexes by direct insertion of epoxide into tetrakis(dimethylamido)zirconium: highly promising approach for developing an ALD precursor of ZrO<sub>2</sub> thin films-Reference-Cited by-同舟云学术

Formation of mononuclear N,O-chelate zirconium complexes by direct insertion of epoxide into tetrakis(dimethylamido)zirconium: highly promising approach for developing an ALD precursor of ZrO₂ thin films

Published:2022 Issue:13 Volume:51 Page:5315-5321
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Jiang Jianwei¹,Choi Sohee¹,Oh Jaehyun²,Choi Jihyun¹,Sun Ho-Jung²,Yoon Sungho¹^ORCID

Affiliation:

1. Department of Chemistry, Chung–Ang University, Seoul 06974, Republic of Korea

2. Department of Materials Science and Engineering, Kunsan National University, Kunsan 573-701, Republic of Korea

Abstract

A non-classical and highly effective approach for the preparation of a mononuclear N,O-chelate Zr compounds was developed. The produced precursor enables ALD of ZrO2 at a satisfying growth rate (0.93 Å per cycle).

Funder

Ministry of Science ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT04207F

Reference33 articles.

1. Structure and stability of ultrathin zirconium oxide layers on Si(001)

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