Formation of mononuclear N,O-chelate zirconium complexes by direct insertion of epoxide into tetrakis(dimethylamido)zirconium: highly promising approach for developing an ALD precursor of ZrO2 thin films
Author:
Affiliation:
1. Department of Chemistry, Chung–Ang University, Seoul 06974, Republic of Korea
2. Department of Materials Science and Engineering, Kunsan National University, Kunsan 573-701, Republic of Korea
Abstract
Funder
Ministry of Science ICT and Future Planning
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT04207F
Reference33 articles.
1. Structure and stability of ultrathin zirconium oxide layers on Si(001)
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Reliability of ultra thin ZrO2 films on strained-Si
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5. Molecular design of improved precursors for the MOCVD of oxides used in microelectronics
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2. New class of Zr precursor containing boratabenzene ligand enabling highly conformal wafer-scale zirconium dioxide thin films through atomic layer deposition;Surfaces and Interfaces;2024-03
3. Living ring-opening polymerization of β-butyrolactone initiated by mononuclear zirconium compounds containing sterically hinderedN,O-chelate and anionic dimethylamide ligands;RSC Advances;2023
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