Epitaxial growth mechanisms of single-crystalline GaN on single-crystalline graphene-Reference-Cited by-同舟云学术

Epitaxial growth mechanisms of single-crystalline GaN on single-crystalline graphene

Published:2021 Issue:32 Volume:23 Page:5451-5455
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Feng Yuxia¹^ORCID,Yang Xuelin²,Zhang Zhihong²,Zhang Jie²,Wei Jiaqi²,Zhou Lixing³,Liu Kaihui²,Xu Fujun²^ORCID,Ge Weikun²,Shen Bo²⁴

Affiliation:

1. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124, China

2. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P. R. China

3. Faculty of Information Technology, School of Microelectronics, Beijing University of Technology, Beijing 100124, China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Abstract

Dangling bonds, an AlN nucleation layer and high selectivity of AlN nucleation are prerequisites for the epitaxy of single-crystalline GaN on a single-crystalline graphene template.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Key Research and Development Program of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00489A

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