Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene-Reference-Cited by-同舟云学术

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Published:2019-07-23 Issue:42 Volume:29 Page:1905056
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Feng Yuxia¹,Yang Xuelin¹^ORCID,Zhang Zhihong¹,Kang Duan¹,Zhang Jie¹,Liu Kaihui¹,Li Xinzheng¹,Shen Jianfei¹,Liu Fang¹,Wang Tao¹,Ji Panfeng¹,Xu Fujun¹,Tang Ning¹,Yu Tongjun¹,Wang Xinqiang¹²,Yu Dapeng¹,Ge Weikun¹,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking University Beijing 100871 P. R. China

2. Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Postdoctoral Research Foundation of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201905056

Reference35 articles.

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2. The 2018 GaN power electronics roadmap

3. Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers

4. Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process

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