Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor-Reference-Cited by-同舟云学术

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

Published:2015 Issue:4 Volume:3 Page:854-860
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Choi Chang-Ho¹²³⁴,Han Seung-Yeol¹²³⁴⁵,Su Yu-Wei¹²³⁴⁶,Fang Zhen¹²³⁴,Lin Liang-Yu⁷⁸⁹,Cheng Chun-Cheng⁷⁸⁹,Chang Chih-hung¹²³⁴

Affiliation:

1. Oregon Process Innovation Center/Microproduct Breakthrough Institute and School of Chemical, Biological & Environmental Engineering

2. Oregon State University

3. Corvallis

4. USA

5. CSD Nano, Inc.

6. Department of Materials Science and Engineering

7. AU Optronics Corporation

8. Hsinchu

9. Taiwan

Abstract

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC01568A

Reference48 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Review paper: Transparent amorphous oxide semiconductor thin film transistor

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature

5. Low-temperature, solution-processed metal oxide thin film transistors

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