The origin of twins in the growth of the (100) plane of a β-Ga<sub>2</sub>O<sub>3</sub> crystal using EFG-Reference-Cited by-同舟云学术

The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG

Published:2023 Issue:24 Volume:25 Page:3556-3563
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Bu Yuzhe¹²^ORCID,Wei Jinshan³,Sai Qinglin¹^ORCID,Qi Hongji¹⁴

Affiliation:

1. Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, P. R. China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

3. School of Semiconductor and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China

4. Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, P. R. China

Abstract

The twins in the (010) plane of a (100) oriented β-Ga2O3 crystal by EFG. The formation of twin crystals is accompanied by the slip of the (102̄) plane.

Funder

National Key Research and Development Program of China

Department of Science and Technology for Social Development

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00249G

Reference35 articles.

1. A review of Ga2O3materials, processing, and devices

2. Recent progress on the electronic structure, defect, and doping properties of Ga2O3

3. The dawn of Ga2O3 HEMTs for high power electronics - A review

4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

5. Growth and physical characterization of high resistivity Fe: β-Ga2O3 crystals*

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