On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method
Author:
Affiliation:
1. Institute of Advanced Data Transfer Systems, ITMO University, Kronverkskiy pr. 49, St. Petersburg 197101, Russia
2. Regional Engineering Project Office, Togliatti State University, Belorusskaya St. 14, Togliatti 445020, Russia
Abstract
Funder
Ministry of Science and Higher Education of the Russian Federation
Publisher
World Scientific Pub Co Pte Ltd
Subject
General Materials Science
Link
https://www.worldscientific.com/doi/pdf/10.1142/S179360472340026X
Reference23 articles.
1. An assessment of wide bandgap semiconductors for power devices
2. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition
3. Recent progress on the electronic structure, defect, and doping properties of Ga2O3
4. 2.1 kV (001)- β -Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
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