Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals-Reference-Cited by-同舟云学术

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Dynamics analysis of twin formation for InP and preparation of 6 inch InP single crystals

Published:2024 Issue: Volume: Page:
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Shujie¹^ORCID,Sun Niefeng¹,Shi Yanlei¹,Shao Huimin¹,Gu Zhanbiao¹,Li Xiaolan¹,Wang Yang¹,Zhang Wenya¹,Jiang Jian¹,Kang Yong¹,Zhang Xiaodan¹

Affiliation:

1. The National Key Laboratory of Solid-State Microwave Devices and Circuits, Hebei Semiconductor Research Institute, Shijiazhuang 050051, People's Republic of China

Abstract

Twin-free InP crystals can be grown under suitable growth conditions. A kinetic model for twin nucleation is proposed.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CE/D4CE00600C

Reference55 articles.

1. Study of twins in GaAs, GaP and InAs crystals

2. A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors

3. The origin of twins in the growth of the (100) plane of a β-Ga₂O₃ crystal using EFG

4. Effect of twin boundary formation on the growth rate of the GaSb{111} plane

5. Growth peculiarities of gallium arsenide single crystals

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