Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization-Reference-Cited by-同舟云学术

Nano-grained ZrB2 thin films as a high-performance diffusion barrier in Cu metallization

Published:2016 Issue:2 Volume:6 Page:844-850
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Meng Y.¹²³⁴,Ma F.¹²³⁴,Song Z. X.¹²³⁴,Li Y. H.¹²³⁴,Xu K. W.¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials

2. Xi'an Jiaotong University

3. Xi'an 710049

4. China

5. Department of Physics and Opt-electronic Engineering

Abstract

Nano-grained ZrB₂ thin films are prepared by radio-frequency (rf) magnetron sputtering and, the thermal stability and the diffusion barrier performance are evaluated at elevated temperatures.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA20864E

Reference35 articles.

1. Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization

2. Coupled self-assembled monolayer for enhancement of Cu diffusion barrier and adhesion properties

3. Thermal stability of RuZr alloy thin films as the diffusion barrier in Cu metallization

4. Prospective development in diffusion barrier layers for copper metallization in LSI

5. 5nm ruthenium thin film as a directly plateable copper diffusion barrier

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