Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization-Reference-Cited by-同舟云学术

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Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization

Published:2015-02-09 Issue:6 Volume:106 Page:063112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bong Jae Hoon¹^ORCID,Yoon Seong Jun¹,Yoon Alexander²,Hwang Wan Sik³^ORCID,Cho Byung Jin¹

Affiliation:

1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, South Korea

2. Lam Research Corporation, San Jose, California 95134, USA

3. Department of Materials Engineering, Korea Aerospace University, Goyang 412-791, South Korea

Funder

Lam Research Corporation (Lam Research)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4908559

Reference24 articles.

1. Tungsten Nitrido Complexes as Precursors for Low Temperature Chemical Vapor Deposition of WNxCy Films as Diffusion Barriers for Cu Metallization

2. Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices

3. Thermal Stability of Atomic Layer Deposited Ru Layer on Si and TaN/Si for Barrier Application of Cu Interconnection

4. Electric Field Effect in Atomically Thin Carbon Films

5. The rise of graphene

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