Tungsten Nitrido Complexes as Precursors for Low Temperature Chemical Vapor Deposition of WNxCy Films as Diffusion Barriers for Cu Metallization-Reference-Cited by-同舟云学术

Tungsten Nitrido Complexes as Precursors for Low Temperature Chemical Vapor Deposition of WNxCy Films as Diffusion Barriers for Cu Metallization

Published:2014-01-15 Issue:4 Volume:136 Page:1650-1662
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

McClain K. Randall¹,O’Donohue Christopher²,Koley Arijit¹,Bonsu Richard O.¹,Abboud Khalil A.¹,Revelli Joseph C.²,Anderson Timothy J.²,McElwee-White Lisa¹

Affiliation:

1. Department of Chemistry, University of Florida, Gainesville, Florida, 32611-7200, United States

2. Department of Chemical Engineering, University of Florida, Gainesville, Florida, 32611-6005, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja4117582

Reference93 articles.

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4. Magnetron sputter deposition with high levels of metal ionization

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