Synthesis and optoelectronic properties of ultrathin Ga2O3 nanowires
Author:
Affiliation:
1. Department of Mechanical & Materials Engineering
2. University of Nebraska-Lincoln
3. Lincoln
4. USA
5. Center for Nanophase Materials Sciences
6. Oak Ridge National Laboratory
7. Oak Ridge
8. Department of Electrical & Computer Engineering
Abstract
Synthesis using a gallium sulfide precursor and Au or Ag catalysts produces ultrathin single-crystalline β-Ga2O3 nanowires at low substrate temperatures.
Funder
Division of Materials Research
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02040K
Reference61 articles.
1. Lateral β-Ga2O3 field effect transistors
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4. Review of Ga2O3-based optoelectronic devices
5. Development of gallium oxide power devices
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