Interaction of defects with solar irradiation for devices used ZnO/Ga2O3 heterojunctions in which Ga2O3 prepared using oxidation of the heavily doped p-type GaAs-Reference-Cited by-同舟云学术

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Interaction of defects with solar irradiation for devices used ZnO/Ga2O3 heterojunctions in which Ga2O3 prepared using oxidation of the heavily doped p-type GaAs

Published:2022-03 Issue: Volume:76 Page:35-43
ISSN:0577-9073
Container-title:Chinese Journal of Physics
language:en
Short-container-title:Chinese Journal of Physics

Author:

Lin Yow-Jon,Lin Meng-Hsun,Huang Jing-Shiuan,Chang Hsing-Cheng

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference36 articles.

1. Zinc oxide bulk, thin films and nanostructures;Jagadish,2006

2. p-type ZnO materials: theory, growth, properties and devices;Fan;Progress in Materials Science,2013

3. Zinc oxide: bulk growth, role of hydrogen and Schottky diodes;Monakhov;J. Phys. D: Appl. Phys.,2009

4. Piezoelectric effect enhanced flexible UV photodetector based on Ga2O3/ZnO heterojunction;Wang;Materials Today Physics,2021

5. Fabrication of β-Ga2O3/ZnO heterojunction for solar-blind deep ultraviolet photodetection;Guo;Semicond. Sci. Technol.,2017

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the content of stacked ZnO on the structural and optical properties of heterostructured ZnO/Ga2O3 films;Optical Materials: X;2024-02

2. A nanoflower-like GaSe/β-Ga₂O₃ based heterostructure for highly efficient self-powered broadband photodetectors;Journal of Materials Chemistry C;2024

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