Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure-Reference-Cited by-同舟云学术

Direct observation of an electrically degenerate interface layer in a GaN/sapphire heterostructure

Author:

Kim Young-Min¹²³⁴⁵^ORCID,Lee Sung Bo⁶⁷⁸⁴^ORCID,Lee Jaekwang⁹¹⁰¹¹⁴^ORCID,Oh Sang Ho¹²³⁴^ORCID

Affiliation:

1. Department of Energy Science

2. Sungkyunkwan University (SKKU)

3. Suwon 16419

4. Republic of Korea

5. Center for Integrated Nanostructure Physics

6. Department of Materials Science and Engineering and Research Institute of Advanced Materials (RIAM)

7. Seoul National University

8. Seoul 08826

9. Department of Physics

10. Pusan National University

11. Busan 46241

Abstract

An electrically degenerate layer deteriorates the optoelectric performance of a wide band gap semiconductor grown on an insulator substrate.

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference71 articles.

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