Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep20787.pdf
Reference41 articles.
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3. Chitnis, A. et al. Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire. Appl. Phys. Lett. 84, 3663–3665 (2004).
4. Chakraborty, A. et al. Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates. Jpn. J. Appl. Phys. 44, L173–L175 (2005).
5. Park S. H. & Chuang, S. L. Crystal-orientation effects on the piezoelectric field and electronic properties of strained wurtzite semiconductors. Phys. Rev. B 59, 4725–4237 (1999).
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