Layer-Controlled Growth of Single-Crystalline 2D Bi2O2Se Film Driven by Interfacial Reconstruction

Author:

Kang Minsoo1ORCID,Jeong Han Beom1,Shim Yoonsu1ORCID,Chai Hyun-Jun1,Kim Yong-Sung2ORCID,Choi Minhyuk3,Ham Ayoung1,Park Cheolmin4,Jo Min-kyung13,Kim Tae Soo1ORCID,Park Hyeonbin15,Lee Jaehyun1,Noh Gichang16ORCID,Kwak Joon Young6ORCID,Eom Taeyong5ORCID,Lee Chan-Woo7,Choi Sung-Yool4ORCID,Yuk Jong Min1ORCID,Song Seungwoo3ORCID,Jeong Hu Young8ORCID,Kang Kibum19ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

2. Korea Research Institute of Standards & Science (KRISS), Daejeon 34113, Republic of Korea

3. Opernado Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon 34113, Republic of Korea

4. School of Electrical Engineering, Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, Korea Advanced Institute of Science and Technology (KAIST) 291, Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

5. Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT) 141, Gajeong-ro, Daejeon 34114, Republic of Korea

6. Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

7. Computational Science & Engineering Laboratory, Korea Institute of Energy Research, Daejeon 34129, Republic of Korea

8. Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

9. Graduate School of Semiconductor Technology, Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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