Improved interface properties of GaN-based metal-oxide-semiconductor devices with thin Ga-oxide interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4990689
Reference24 articles.
1. GaN: Processing, defects, and devices
2. New Unipolar Switching Power Device Figures of Merit
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4. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
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