A practical route towards fabricating GaN nanowire arrays-Reference-Cited by-同舟云学术

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A practical route towards fabricating GaN nanowire arrays

Published:2011 Issue:19 Volume:13 Page:5929
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Jianqi,Huang Jun,Gong Xiaojing,Wang Jianfeng,Xu Ke,Qiu Yongxin,Cai Demin,Zhou Taofei,Ren Guoqiang,Yang Hui

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2011/CE/C1CE05292F

Reference41 articles.

1. Shape control of CdSe nanocrystals

2. Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections

3. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

4. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

5. Vertically Aligned p-Type Single-Crystalline GaN Nanorod Arrays on n-Type Si for Heterojunction Photovoltaic Cells

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1. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers;Applied Physics Express;2024-05-01

2. Review—Progress in Electrochemical Etching of Third-Generation Semiconductors;ECS Journal of Solid State Science and Technology;2023-04-01

3. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties;CrystEngComm;2023

4. Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence;CrystEngComm;2022

5. Nucleation mechanism of GaN crystal growth on porous GaN/sapphire substrates;CrystEngComm;2022

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