Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance-Reference-Cited by-同舟云学术

Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance

Published:2023 Issue:17 Volume:11 Page:5740-5749
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Gomersall Daisy E.¹^ORCID,Niang Kham M.¹^ORCID,Parish James D.²^ORCID,Sun Zhuotong³^ORCID,Johnson Andrew L.²^ORCID,MacManus-Driscoll Judith L.³^ORCID,Flewitt Andrew J.¹^ORCID

Affiliation:

1. Electrical Engineering Division, Engineering Department, University of Cambridge, Cambridge CB3 0FA, UK

2. Department of Chemistry, University of Bath, Claverton Down, Bath, BA2 7AY, UK

3. Department of Materials Science & Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK

Abstract

P-type SnO thin films have been deposited using multiple pulses of a novel Sn(ii) precursor per ALD cycle. The study looks at the effect on TFT performance and AFM analysis has explored the change in the growth processes during deposition.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00255A

Reference45 articles.

1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors