Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance

Author:

Ryu Seung Ho12ORCID,Jeon Jihoon12,Park Gwang Min12ORCID,Kim Taikyu2ORCID,Eom Taeyong3ORCID,Chung Taek-Mo3ORCID,Baek In-Hwan4ORCID,Kim Seong Keun12ORCID

Affiliation:

1. KU-KIST Graduate School of Converging Science and Technology, Korea University 1 , Seoul 02841, South Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology 2 , Seoul, 02792, South Korea

3. Division of Advanced Materials, Korea Research Institute of Chemical Technology 3 , Daejeon 34114, South Korea

4. Department of Chemical Engineering, Inha University 4 , Incheon 22212, South Korea

Abstract

Despite its relatively high hole mobility, the electrical performance of p-type SnO thin-film transistors (TFTs) lags behind that of n-type oxide TFTs. In this study, we present an approach to enhance the performance of p-type SnO TFTs by utilizing an atomic-layer-deposited SnO/high-k structure, with crystalline HfO2 (c-HfO2) serving as a high-k dielectric. However, the grain boundaries on the c-HfO2 surface influenced the microstructure and orientation of the SnO layer, resulting in a random orientation and surface roughening. To address this issue, we modified the c-HfO2 surface with an amorphous ultrathin Al2O3 layer to eliminate the grain boundaries on the deposition surface. This enabled the alignment of the (00l) SnO planes parallel to the substrate surface and provided a smooth surface. Moreover, the introduction of ultrathin Al2O3 into SnO/high-k stacks substantially improved the electrical performance of p-type SnO TFTs. Our findings highlight the potential of integrating van der Waals semiconductors with high-k dielectrics, facilitating opportunities for advanced device applications.

Funder

National Research Foundation of Korea

National Research Council of Science and Technology

KU-KIST Graduate School of Converging Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3