Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films-Reference-Cited by-同舟云学术

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

Published:2017 Issue:12 Volume:5 Page:3139-3145
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Soo Hyun¹²³⁴,Baek In-Hwan¹²³⁴⁵,Kim Da Hye⁶⁷⁸⁴,Pyeon Jung Joon¹²³⁴⁹,Chung Taek-Mo⁶⁷⁸⁴,Baek Seung-Hyub¹²³⁴,Kim Jin-Sang¹²³⁴,Han Jeong Hwan⁶⁷⁸⁴,Kim Seong Keun¹²³⁴^ORCID

Affiliation:

1. Center for Electronic Materials

2. Korea Institute of Science and Technology

3. Seoul

4. South Korea

5. Department of Materials Science and Engineering

6. Division of Advanced Materials

7. Korea Research Institute of Chemical Technology

8. Daejeon

9. KU-KIST Graduate School of Converging Science and Technology

Abstract

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC04750E

Reference40 articles.

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4. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

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